Sb on GaAs(110) structure studied by direct methods and chemical-shift photoelectron diffraction

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 223-227

  Ascolani, H ^a   Avila, J ^b,c   Franco, N ^c   Asensio, M C ^b,c  

^a INSTITUTO BALSEIRO   (Argentina)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Interfaces; Photoelectron diffraction; Semiconductors

Indexed keywords

ADSORPTION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; ELECTRON ENERGY LEVELS; FOURIER TRANSFORMS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PHENOMENA; SURFACE STRUCTURE;

CHEMICAL SHIFTS; SCANNED ENERGY PHOTOELECTRON DIFFRACTION;

HETEROJUNCTIONS;

EID: 0031702369     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00505-9     Document Type: Article

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