Hydrogen-induced reordering of the Si(111)(√3 × √3)-Bi surface studied by scanning tunneling microscopy

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 171-175

  Naitoh, Masamichi ^a   Shimaya, Hiroshi ^a   Oishi, Nobuhiro ^b   Shoji, Fumiya ^c   Nishigaki, Satoshi ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c KYUSHU KYORITSU UNIVERSITY   (Japan)

Author keywords

Atomic hydrogen adsorption; Bismuth; Si(111) surface; STM; Surface structure

Indexed keywords

BISMUTH; CRYSTAL ORIENTATION; DEPOSITION; GAS ADSORPTION; HYDROGEN; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE PHENOMENA; SURFACE STRUCTURE;

ATOMIC HYDROGEN;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0031700857     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00509-6     Document Type: Article

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