Electron cyclotron resonance reactive ion etching of GaAs in chlorine-methane

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 383-386

  Penner, S ^a   Fallahi, M ^a   Nordman, O ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; ELECTRON CYCLOTRON RESONANCE; METHANE; MIXTURES; PLASMAS; SEMICONDUCTING GALLIUM ARSENIDE;

ASPECT RATIOS;

ETCHING;

EID: 0031700820     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00088-4     Document Type: Article

References (6)

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4. S. Pang and K. Ko. J. Vac Sci. Technol. B 10, 2703 (1992).
5. K. Ko and S. Pang. J Vac Sci. Technol. B 11, 2275 (1993).
6. K. Ko et al. J Vac Sci. Technol. B 12, 3382 (1994).