Wet etching of Al2O3 for selective patterning of microstructures using Ar+ ion implantation and H3PO4

Journal of the Electrochemical Society

Volumn 145, Issue 1, 1998, Pages 344-347

  Levy, P ^a,b   Bianconi, M ^a   Correra, L ^a  

^a CNR   (Italy)

^b DEPARTAMENTO DE FÍSICA   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ARGON; ATOMIC FORCE MICROSCOPY; ION IMPLANTATION; MICROSTRUCTURE; PHOSPHATES; PHOTOLITHOGRAPHY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HYDROGEN PHOSPHATE; SELECTIVE PATTERNING; WET ETCHING;

ETCHING;

EID: 0031700772     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838257     Document Type: Article

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