A new etching method for single-crystal Al2O3 film on Si using Si ion implantation

Sensors and Actuators, A: Physical

Volumn 53, Issue 1-3, 1996, Pages 340-344

  Ishida, Makoto ^a   Kim, Hoon ^a   Kimura, Takayuki ^a   Nakamura, Tetsuro ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Alumina; Etching; Ion implantation

Indexed keywords

EID: 11644285122     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/0924-4247(96)01150-8     Document Type: Article

References (8)

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