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Volumn 10, Issue 1, 1998, Pages 24-26

High-speed tunneling-barrier GaAs light emitters

Author keywords

High speed optical communication; Light emitting diodes; Tunneling

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; ELECTRON TUNNELING; LIGHT MODULATION; OPTICAL COMMUNICATION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

EID: 0031699333     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.651089     Document Type: Article
Times cited : (4)

References (13)
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  • 6
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    • Electroluminescence spectroscopy of resonantly coupled GaAs-AIAs superlattices
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    • Maude, D.K.1    Kuhn, O.2    Portal, J.C.3    Henini, M.4    Eaves, L.5    Hill, G.6    Pate, M.A.7
  • 10
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    • Quantum-well luminescence at acceptors in p-i-n resonant tunneling diodes
    • H. B. Evans, L. Eaves, and M. Henini, "Quantum-well luminescence at acceptors in p-i-n resonant tunneling diodes," Semiconduct. Sci. Technol., vol. 9, pp. 555-558, 1994.
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    • Optical switching characteristics of a bistable resonant tunneling light-emitting diode
    • C. Van Hoof, J. Genoe, R. P. Mertens, E. Goovaerts, and G. Borghs, "Optical switching characteristics of a bistable resonant tunneling light-emitting diode," Electron. Lett., vol. 28, pp. 123-124, 1992.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.