Gigahertz modulation of tunneling-based gaAs light emitters

IEEE Photonics Technology Letters

Volumn 9, Issue 11, 1997, Pages 1463-1465

  Van Hoof, C ^a   De Neve, H ^a   Mertens, R ^a   Romandic, I ^b   Goovaerts, E ^b   Borghs, G ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; LIGHT MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

RESONANT TUNNELING STRUCTURE;

LIGHT EMITTING DIODES;

EID: 0031276309     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.634709     Document Type: Article

References (11)

1. T. J. de Lyon, J. M. Woodall, D. T. Mclnturff, R. J. S. Bates, J. A. Kash, P. D. Kirchner, and F. Cardone, "Doping concentration dependence of radiance and optical modulation bandwidth in carbon-doped GaInP/GaAs light emitting diodes grown by gas-source molecular beam epitaxy," Appl. Phys. Lett., vol. 60, p. 353, 1992.
2. M. Ettenberg, M. G. Harvey, and D. R. Patterson, "Linear, high-speed, high-power strained quantum-well LED's," IEEE Photon. Technol. Lett., vol. 4, p. 27, 1992.
3. T. Ohnishi, K. Mukaiyama, M. Yamanishi, N. Ochi, Y. Ono, Y. Kan, H. Ishikawa, and I. Suemune, "300 ps switching of spontaneous emission by quantum confined field effect in a light emitting triode," IEEE Photon. Technol. Lett., vol. 2, p. 546, 1990.
4. C. Van Hoof, J. Genoe, R. Mertens, G. Borghs, and E. Goovaerts, "Electroluminescence from bipolar resonant tunneling diodes," Appl. Phys. Lett., vol. 60, p. 77, 1992.
5. D. Bertram, H. Lage, H. T. Grahn, and K. Ploog, Appl. Phys. Lett., vol. 64, p. 1012, 1994.
6. P. D. Buckle, J. W. Cockburn, R. J. Teissier, A. R. K. Willcox, D. M. Whittaker, M. S. Skolnick, G. W. Smith, R. Grey, G. Hill, and M. A. Pate, "Control of excited subband population in double-barrier resonant tunneling structures," Semiconduct. Sci. Technol., vol. 9, p. 533, 1994.
7. H. T. Grahn, D. Bertram, H. Lage, K. von Klitzing, and K. Ploog, "Electroluminescence spectroscopy of resonantly coupled GaAs-AlAs superlattices," Semiconduct. Sci. Technol., vol. 9, p. 537, 1994.
8. D. K. Maude, O. Kuhn, J. C. Portal, M. Henini, L. Eaves, G. Hill, and M. A. Pate, "Electroluminescence and magnetotransport studies of a p-i-n superlattice double-barrier resonant tunneling structure," Semiconduct. Sci. Technol., vol. 9, p. 540, 1994.
9. H. B. Evans, L. Eaves, and M. Henini, "Quantum-well luminescence at acceptors in p-i-n resonant tunneling diodes," Semiconduct. Sci. Technol, vol. 9, p. 555, 1994.
10. C. Van Hoof, J. Genoe, R. P. Mertens, E. Goovaerts, and G. Borghs, "Optical switching characteristics of a bistable resonant tunneling light-emitting diode," Electron. Lett., vol. 28, p. 123, 1992.
11. C. Van Hoof, J. Genoe, E. Goovaerts, and G. Borghs, "Bipolar charge redistribution in resonant tunneling light-emitting diodes," Phys. Rev., vol. B51, p. 13491, 1995.