Optical properties of GaN films grown on SiC/Si

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1149-1152

  Devrajan, J ^a   Steckl, A J ^a   Tran, C A ^b   Stall, R A ^b  

^a UNIVERSITY OF CINCINNATI   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

CVD; Photoluminescence; Uniformity; X ray diffraction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031699028     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1149     Document Type: Article

References (3)

1. A. J. Steckl, C. Yuan, Q. Tong, U. Gosele, M. J. Loboda, J. Electrochem. 141, L66 (June 1994).
2. A. J. Steckl, J. Devrajan, C. Tran and R. A. Stall, Appl. Phys. Lett. 69, 2264 (Oct 1996).
3. A. J. Steckl, J. Devrajan, C. Tran and R. A. Stall, J. Electron. Mat. 26. 217 (March 1997).