Theoretical investigation of the electrical behavior of SiC MESFETs for microwave power amplification

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 973-976

  Schwierz, F ^a   Roschke, M ^a   Liou, J J ^b   Paasch, G ^a,c  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c IFW DRESDEN   (Germany)

Author keywords

Cut Off Frequency; Device Simulation; Microwave Devices; Output Power; SiC MESFET

Indexed keywords

AMPLIFICATION; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HEATING; IONIZATION OF SOLIDS; MICROWAVE DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

TWO REGION TRANSISTOR MODEL; VOLTAGE FIELD CHARACTERISTICS;

MESFET DEVICES;

EID: 0031699019     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.973     Document Type: Article

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