Solid source molecular beam epitaxy of low threshold strained layer 1.3μm InAsP/GaInAsP lasers

Electronics Letters

Volumn 32, Issue 18, 1996, Pages 1674-1675

  Wamsley, C C ^a   Koch, M W ^a   Wicks, G W ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

Molecular beam epitaxial growth; Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; ETCHING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SUBSTRATES;

MOLECULAR BEAM EPITAXIAL GROWTH; SEMICONDUCTOR JUNCTION LASERS; SOLID SOURCE MOLECULAR BEAM EPITAXY; WET ETCHING;

SEMICONDUCTOR LASERS;

EID: 0030217301     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961090     Document Type: Article

References (6)

1. YAMAMOTO, M., YAMAMOTO, N., and NAKANO, J.: 'MOVPE growth of strained InAsP/InGaAsP quantum well structures for low threshold 1.3μm lasers', IEEE J. Quantum Electron., 1994, QE-30, pp. 554-561
2. THIAGARAJAN, P., BERNUSSI, A., TEMKIN, H., ROBINSON, G., SERGENT, A., and LOGAN, R.: 'Growth of 1.3μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy', Appl. Phys. Lett., 1995, 67, pp. 3676-3678
3. SUGIURA, H., MITSUHARA, M., OOHASHI, H., HIRONO, T., and NAKAHHIMA, K.: 'Metalorganic molecular beam epitaxy of strained InAsP/InGaAsP multi-quantum-wells for 1.3μm wavelength laser diodes', J. Crystal Growth, 1995, 147, pp. 1-7
4. ADAMS, A.: 'Band-structure engineering for low-threshold high-efficiency semiconductor lasers', Electron. Lett., 1986, 22, pp. 249-250
5. 2 oven for molecular beam epitaxy', J. Vac. Sci, Technol., 1990, B8. pp. 311-313
6. 0.5P by molecular beam epitaxy', J. Vac. Sci. Technol., 1991, B8, pp. 342-344