Time-resolved spectroscopy on GaN/AlGaN double heterostructures and quantum wells

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1299-1302

  Im, U S ^a   Off, J ^a   Sohmer, A ^a   Scholz, F ^a   Hangleiter, A ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

AlGaN Quantum Wells; GaN ; Radiative Lifetime; Time Resolved Spectroscopy

Indexed keywords

EXCITONS; HETEROJUNCTIONS; LOW TEMPERATURE PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031674161     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1299     Document Type: Article

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