Characterization of homoepitaxial SiC layers

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 528-531

  Schmitt, J ^a   Troffer, T ^a   Christiansen, K ^a   Schadt, M ^a   Christiansen, S ^a   Helbig, R ^a   Pensl, G ^a   Strunk, H P ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENT MEASUREMENT; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031141001     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00994-3     Document Type: Article

References (4)

1. T. Yoshinobu, M. Nakayama, H. Shiomi, T. Fuyuki and H. Matsunami, J. Crystal Growth 99 (1990) 520.
2. N. Kuroda, K. Shibahara, W.S. Yoo, S. Nishino and H. Matsunami. Extended Abstracts, 19th Conf. on Solid State Devices and Materials, Tokyo (1987) 227.
3. L.B. Rowland, R.S. Kern, S. Tanaka and R.F. Davis, Appl. Phys. Lett. 62 (1993) 3333.
4. K. Hölzlein, G. Pensl, M. Schulz and P. Stolz, Rev. Sci. Instrum. 57 (1986) 1373.