Effect of electron irradiation on the photovoltaic characteristics of GaAs p-n junctions

Thin Solid Films

Volumn 312, Issue 1-2, 1998, Pages 327-330

  Dzhafarov, T D ^a,b   Akciz C S ^a   Oren D ^a  

^a YILDIZ TECHNICAL UNIVERSITY   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

Diffusion; Gallium arsenide; Liquid phase epitaxy; Photo voltage

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; CURRENT DENSITY; DIFFUSION IN SOLIDS; ELECTRON BEAMS; LIQUID PHASE EPITAXY; PHOTOVOLTAIC CELLS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SHORT CIRCUIT CURRENTS;

OPEN CIRCUIT VOLTAGE; SHORT CIRCUIT PHOTOCURRENT DENSITY;

SEMICONDUCTOR JUNCTIONS;

EID: 0031673024     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00722-0     Document Type: Article

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