Atomic diffusion in semiconductor epitaxial structures

physica status solidi (a)

Volumn 42, Issue 1, 1977, Pages 11-45

  Dzhafarov, T D ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS;

EID: 0017513767     PISSN: 00318965     EISSN: 1521396X     Source Type: Journal    
DOI: 10.1002/pssa.2210420102     Document Type: Review

References (131)

1. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
2. Solubility and Electrical Behavior of Zinc, Sulfur, Selenium, and Tellurium in Gallium Phosphide
3. Distribution of Impurities in Zn,O-Doped GaP Liquid Phase Epitaxy Layers
4. Impurity Redistribution Processes in Epitaxial Silicon Layers
5. Impurity Distribution in Epitaxial Silicon Films
6. Epitaxial Silicon Junctions
7. A Kinetic Theory for Autodoping for Vapor Phase Epitaxial Growth of Germanium
8. The Effect of Vapor Etching on “Diffuse-Up” of Buried Impurities into Epitaxial Layer
9. One-Dimensional Dislocations. I. Static Theory
10. On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates
11. Dislocations and their Relation to Irregularities in Zinc-Diffused GaAsP p-n Junctions
12. Anomalous Diffusion of Phosphorus into Silicon
13. The Effect of Applied Electric Field on Diffusion of Impurities in Gallium Arsenide
14. Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1−ηPη and GaAs1−nPη
15. Zinc Diffusion in InxGa1-xAs
16. Vapor Growth Parameters and Impurity Profiles on N-Type GaAs Films Grown on N[sup +]-GaAs by the Hydrogen-Water Vapor Process
17. The Substrate Orientation Effect on Impurity Profiles of Epitaxial GaAs Films
18. Zum Wachstum von AIIIBV-Halbleitern aus nichtstöchiometrischen Schmelzen (II) Dotierung von GaAs und Ga1−xAlxAs mit Zink
19. On a Possibility of Determining Nonuniformities in AlxGa1−xAs Solid Solution Compositions
20. Diffusion of Arsenic near the Interface of GaAs-Ge Epitaxy
21. Autodoping Effects near the Interface of CdS-GaAs Junction
22. Degradation sources in GaAs-AlGaAs double-heterostructure lasers
23. Rapid Degradation in Double-Heterostructure Lasers. II. Semiquantitative Analyses on the Propagation of Dark Line Defects
24. Anomalous Impurity Diffusion in Epitaxial Silicon near the Substrate