Near-field luminescence measurements on GaInAsP/InP double heterostructures at room temperature

Applied Optics

Volumn 37, Issue 1, 1998, Pages 106-112

  Barenz, J ^a,b   Eska, A ^a   Hollricher, O ^a   Marti, O ^a   Wachter, M ^a   Schoffel U ^a   Heinecke, H ^a  

^a UNIVERSITY OF ULM   (Germany)

^b Omicron Vakuumphysik GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFUSION; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

METAL ORGANIC MOLECULAR BEAM EPITAXY; NEAR FIELD LUMINESCENCE SPECTROSCOPY; SCANNING NEAR FIELD MICROSCOPY; TOPOGRAPHY;

EMISSION SPECTROSCOPY;

EID: 0031672237     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.37.000106     Document Type: Article

References (5)

1. H. Heinecke and E. Veuhoff, “Evaluation of III-V growth technologies for optoelectronic applications, ” Mater. Sci. Eng. 21, 120-125 (1993).
2. H. Heinecke, Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, NATO ASI Series B (Kluwer Academic, Dordrecht, The Netherlands, 1995), pp. 229-242.
3. H. Heinecke, M. Wachter, and U. Schöffel, “Facet formation and characterization of III-V structures grown on patterned surfaces, ” in Proceedings to International Workshop on Growth, Characterization and Exploitation of Epitaxial Compound Semiconductors on Novel Index Surfaces (NIS 96) Microelectron J. 28 (1997).
4. J. Barenz, O. Hollricher, and O. Marti, “An easy-to-use non-optical shear-force distance control for near-field optical microscopes, ” Rev. Sci. Instrum. 67, 1912-1916 (1996).
5. G. Krausch, S. Wegscheider, A. Kirsch, H. Bielefeldt, J. C. Meiners, and J. Mlynek, “Near-field microscopy and lithography with uncoated fiber tips: a comparison, ” Opt. Commun. 119, 283-288 (1995).