Characterization of acid diffusion for a negative chemically amplified resist using X-ray proximity lithography

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 301-304

  Choi, Bo K ^a   Yang, J S ^a   Lee, K H ^a   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDS; CALCULATIONS; DIFFUSION; MEASUREMENTS; PHOTORESISTS;

NEGATIVE CHEMICALLY AMPLIFIED RESIST;

X RAY LITHOGRAPHY;

EID: 0031654080     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00069-0     Document Type: Article

References (5)

1. I. Raptis, L. Grella, P. Argitis, M. Gentili, N. Glezos and G. Petrocco, "Determination of acid diffusion and energy deposition parameters by point e-beam exposure in chemically amplified resists", Microelectronic Engineering 30 (1996) 295-299.
2. T. Yoshimura, Y Nakayama, and Shinji Okazaki, "Acid-diffusion effect on nanofabrication in chemical amplification resist", J. Vac. Sci. Technol. B 10(6), Nov/Dec (1992) 2615-2619.
3. J. Petersen,C. Mack, J. Structevant, J. Byers and D. Miller, "Non-Constant Diffusion Coefficients: Short Description of Modeling and Comparison to Experimental Results", SPIE Vol. 2438 (1995) 167-177.
4. T. Itani, H Yoshino, S Hashmoto and M Yamana, "A study of acid diffusion in chemically amplified deep ultraviolet resist", J. Vac. Sci. Technol. B 14(6). Nov/Dec (1996) 4226-4228.
5. Y. Seo, J. Lee, B. K. Choi, H. Kim and O.Kim, "The printing conditions for 0.13 μm features in X-ray lithography using pohang light source", will appear in this proceeding.