Mobility and saturation drift velocity enhancement in highly doped GaAs and InxGa1-xAs structures designed for use in power FET devices

Electronics Letters

Volumn 32, Issue 5, 1996, Pages 494-496

  Roberts, J M ^a   Harris, J J ^a   Hart, L ^b   Hopkinson, M ^c   Roberts, C ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Field effect transistors; Gallium arsenide; Gallium indium arsenide

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON SCATTERING; FIELD EFFECT TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

EDGE DELTA DOPING; ELECTRON DONOR SEPARATION; GALLIUM INDIUM ARSENIDE; HALL MEASUREMENTS; MOBILITY; POWER FIELD EFFECT TRANSISTOR DEVICES; SATURATION DRIFT VELOCITY ENHANCEMENT;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030081567     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960300     Document Type: Article

References (5)

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