RF performance characteristics of InP millimeter-wave N+-N--N+ Gunn devices

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1997, Pages 451-454

  Eisele, H ^a   Munns, G O ^a   Haddad, G I ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; ETCHING; HEAT SINKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

NOISE PERFORMANCE;

GUNN DEVICES;

EID: 0030654864     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)