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Solar Energy Materials and Solar Cells

Volumn 50, Issue 1-4, 1998, Pages 13-18

Characterization of Cu(InxGa1-x)2Se3.5 thin films prepared by rf sputtering

(4) Tanaka, Tooru a Tanahashi, Nobutaka a Yamaguchi, Toshiyuki b Yoshida, Akira a

a TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

b WAKAYAMA NATIONAL COLLEGE OF TECHNOLOGY (Japan)

Author keywords

Cu(InxGa1 x)2Se3.5; rf sputtering; Thin films

Indexed keywords

COPPER COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY GAP; FABRICATION; LATTICE CONSTANTS; LIGHT ABSORPTION; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CHALCOPYRITES; COPPER INDIUM GALLIUM SELENIDE;

FILM PREPARATION;

EID: 0031647341 PISSN: 09270248 EISSN: None Source Type: Journal
DOI: 10.1016/S0927-0248(97)00095-0 Document Type: Article

Times cited : (17)

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