The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 196-200

  Kaabi, L ^a   Remaki, B ^b   Gontrand, C ^a   Lo, P F ^b   Balland, B ^a  

^a UNIVERSITÉ DE LYON   (France)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; HEAT TREATMENT; ION IMPLANTATION; MASKS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

BORON DIFFUSION KINETICS; DOPANT DRIVE IN EFFICIENCY; JUNCTION FORMATION; SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0030563519     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01424-1     Document Type: Article

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