Electrostatic implications for Sb-mediated growth of Ge on the Si(001) surface

Surface Science

Volumn 384, Issue 1-3, 1997, Pages

  Jenkins, S J ^a   Srivastava, G P ^a  

^a UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

Antimony; Density functional calculations; Germanium; Growth; Low index single crystal surfaces; Semiconducting surfaces; Silicon; Surface energy

Indexed keywords

ANTIMONY; COMPUTATIONAL METHODS; ELECTROSTATICS; INTERFACIAL ENERGY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE STRUCTURE;

DENSITY FUNCTIONAL THEORY (DFT); DIMERS; LOW INDEX SINGLE CRYSTAL SURFACES;

SEMICONDUCTING GERMANIUM;

EID: 0031190335     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00340-3     Document Type: Article

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