Reflection high-energy electron diffraction intensity oscillations during Si growth on Ge(001) by solid source/molecular beam epitaxy

Surface Science

Volumn 402-404, Issue , 1998, Pages 304-307

  Dentel, D ^a   Bischoff, J L ^a   Bolmont, D ^a   Kubler, L ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

Growth; Reflection high energy electron diffraction; Silicon germanium; Surface segregation

Indexed keywords

DEPOSITION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA;

SURFACE SEGREGATION; VOLMER-WEBER GROWTH MODE;

SEMICONDUCTING SILICON;

EID: 0031621904     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)01049-2     Document Type: Article

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