Ge segregation tested by X-ray photoelectron diffraction and surface atom titration during the first stage of Si heteroepitaxy on Ge(001)2 × 1

Surface Science

Volumn 352-354, Issue , 1996, Pages 634-640

  Aubel, D ^a   Kubler, L ^a   Bischoff, J L ^a   Bolmont, D ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

Epitaxy; Germanium; Growth; Molecular beam epitaxy; Photoelectron diffraction; Semiconductor semiconductor heterostructures; Silicon nitride; Silicon germanium; Surface structure, morphology, roughness, and topography; Visible and ultraviolet photoelectron

Indexed keywords

ATOMS; ELECTRON DIFFRACTION; HETEROJUNCTIONS; INTERFACES (MATERIALS); MORPHOLOGY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; TITRATION; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROEPITAXY; SURFACE ATOM TITRATION; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING GERMANIUM;

EID: 0030148578     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01218-4     Document Type: Article

References (18)

1. P.M.J. Marée, K. Nakagawa, F.M. Mulders and J.F. van der Veen, Surf. Sci. 191 (1987) 305.
2. H. Kawabata, H. Ueba and C. Tatsuyama, J. Appl. Phys. 66 (1989) 634.
3. P.C. Kelires and J. Tersoff, Phys. Rev. Lett. 63 (1989) 1164.
4. A.J. Hoeven, J. Aarts and P.K. Larsen, J. Vac. Sci. Technol. A 7 (1989) 5.
5. S.S. Iyer, J.C. Tsang, M.W. Copel, P.R. Pukite and R.M. Tromp, Appl. Phys. Lett. 54 (1989) 219.
6. K. Nakagawa and M. Miyao, J. Appl. Phys. 69 (1991) 3058.
7. S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki and R. Ito, Surf. Sci. 267 (1992) 79.
8. D.S. Lin, T. Miller and T.C. Chiang, Phys. Rev. B 45 (1992) 11415.
9. M. Diani, D. Aubel, J.L. Bischoff, L. Kubler and D. Bolmont, Surf. Sci. 291 (1993) 110.
10. C.S. Fadley, Phys. Scr. T 17 (1987) 39.
11. W.F. Egelhoff, Solid State Mater. Sci. 16 (1990) 213; W.F. Egelhoff, in: Ultra Thin Magnetic Structures, Eds. J.A.C. Bland and B. Heinrich (Springer, Berlin, 1994) p. 220.
12. W.F. Egelhoff, Solid State Mater. Sci. 16 (1990) 213; W.F. Egelhoff, in: Ultra Thin Magnetic Structures, Eds. J.A.C. Bland and B. Heinrich (Springer, Berlin, 1994) p. 220.
13. L. Kubler, F. Lutz, J.L. Bischoff and D. Bolmont, Surf. Sci. 251/252 (1991) 305.
14. M. Diani, J.L. Bischoff, L. Kubler and D. Bolmont, J. Appl. Phys. 73 (1993) 7412.
15. E.K. Hlil, L. Kubler, J.L. Bischoff and D. Bolmont, Phys. Rev. B 35 (19987) 5913.
16. D. Aubel, M. Diani, J.L. Bischoff, D. Bolmont and L. Kubler, J. Vac. Sci. Technol. B 12 (1994) 2699.
17. D.S. Lin, H.H. Hong, T. Miller and T.C. Chiang, Surf. Sci. 312 (1994) 213.
18. R. Tsu, H.Z. Xiao, Y.W. Kim, M.A. Hasan, H.K. Birnbaum, J.E. Greene, D.S. Lin and T.C. Chiang, J. Appl. Phys. 75 (1994) 240.