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Volumn 349, Issue 3, 1996, Pages
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Photoelectron diffraction study on the structure of a vanadium ultrathin film deposited at the TiO2(110) surface
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Author keywords
Epitaxy; Growth; Low index single crystal surfaces; Metal insulator interfaces; Metal oxide semiconductor (MOS) structures; Photoelectron diffraction; Single crystal epitaxy; Surface structure, morphology, roughness, and topography; Titanium; Titanium oxid
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Indexed keywords
ELECTRON BEAMS;
EPITAXIAL GROWTH;
EVAPORATION;
MONOLAYERS;
MORPHOLOGY;
MOS DEVICES;
SINGLE CRYSTALS;
SURFACE ROUGHNESS;
TITANIUM DIOXIDE;
ULTRATHIN FILMS;
VANADIUM;
X RAY DIFFRACTION;
ELECTRON BEAM EVAPORATION;
PHOTOELECTRON DIFFRACTION;
TOPOGRAPHY;
X RAY PHOTOELECTRON DIFFRACTION;
SURFACE STRUCTURE;
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EID: 0030129946
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(95)01339-3 Document Type: Article |
Times cited : (43)
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References (14)
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