Electronic states in magnetic nanostructures

IBM Journal of Research and Development

Volumn 42, Issue 1, 1998, Pages 33-41

  Himpsel, F J ^{a,b,c,d,e,f,g,h,i}   Jung, T A ^c,f,j,k,l,m   Seidler, P F ^n,o,p,q  

^a University of Wisconsin Madison   (United States)

^b UNIVERSITY OF MUNICH   (Germany)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d Research Center's Surface   (United States)

^e Synchrotron Research Center   (United States)

^f AMERICAN PHYSICAL SOCIETY   (United States)

^g American Vacuum Society   (United States)

^h Deutsche Physikalische Gesellschaft (German Physical Society)   (Germany)

ⁱ NEW YORK ACADEMY OF SCIENCES   (United States)

^j PAUL SCHERRER INSTITUTE   (Switzerland)

^k SWISS FEDERAL INSTITUTE OF TECHNOLOGY   (Switzerland)

^l UNIVERSITY OF BASEL   (Switzerland)

^m Swiss Physical Society   (Switzerland)

ⁿ IBM RESEARCH ZURICH   (Switzerland)

^o CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^p UNIVERSITY OF CALIFORNIA   (United States)

^q Exxon Corporation

more..

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; MAGNETIC MATERIALS; MAGNETORESISTANCE; OSCILLATIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

GIANT MAGNETORESISTANCE (GMR); MAGNETIC NANOSTRUCTURES; OSCILLATORY COUPLINGS;

NANOSTRUCTURED MATERIALS;

EID: 0031611425     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.421.0033     Document Type: Article

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