Theory of spin-dependent conductivity in GMR materials

IBM Journal of Research and Development

Volumn 42, Issue 1, 1998, Pages 53-71

  Nesbet, R K ^{a,b,c,d,e,f,g,h,i,j,k,l,m}  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b HARVARD COLLEGE   (United States)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d EDSAC I   (United Kingdom)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f BOSTON UNIVERSITY   (United States)

^g BROOKHAVEN NATIONAL LABORATORY   (United States)

^h INSTITUT PASTEUR   (France)

ⁱ UNIVERSITÉ PARIS SACLAY   (France)

^j University of Paris ^*  (Germany)

^k AMERICAN PHYSICAL SOCIETY   (United States)

^l Materials Research Society   (United States)

^m American Association the Advancement of Science   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; INTERFACES (MATERIALS); MAGNETIC MATERIALS;

GIANT MAGNETORESISTANCE (GMR) MATERIALS; SPIN DEPENDENT CONDUCTIVITY;

MAGNETORESISTANCE;

EID: 0031601030     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.421.0053     Document Type: Article

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