High power InGaAs/GaAsP/InGaP surface emitting laser

Electronics Letters

Volumn 33, Issue 21, 1997, Pages 1794-1795

  Tayahi, M B ^a   Dutta, N K ^a   Hobson, W S ^b   Vakhshoori, D ^b   Lopata, J ^b   Wynn, J ^b  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; HIGH POWER LASERS; PLASMA CONFINEMENT; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031561209     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971162     Document Type: Article

References (5)

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2. LEAR, K.L., CHOQUETTE, K.D., SCHNEIDER, R.P., KILCOYNE, S.P., and GEIB, K.M.: 'Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency', Electron Lett., 1995, 31, pp. 208-209
3. HUFFAKER, D.L., SHI, J., and DEPPE, D.G.: 'Native oxide defined ring contact for low threshold vertical cavity lasers', Appl. Phys Lett., 1994, 65, pp. 97-99
4. VAKHSHOORI, D., HOBSON, W.S., HAN, H., LOPATA, J., WYNN, J.D., DEJONG, J., SCHNOES, M.L., and ZYDZIK, G.J.: 'Strain compensated 980nm SPIN laser with improved performance', Electron Lett., 1996, 32, pp. 1007-1008
5. MACDOUGAL, M.H., DAPKUS, P.D., PUDIKOV, V., ZHAO, H., and YANG, G.M.: 'Ultralow threshold current vertical cavity surface emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors', Photonics Technol. Lett., 1995, 7, pp. 229-231