Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photodetectors

Electronics Letters

Volumn 33, Issue 10, 1997, Pages 912-914

  Bottcher E H ^a   Droge E ^a   Strittmatter, A ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Gallium indium arsenide; Metal semiconductor metal structures; Photodetector

Indexed keywords

CHARACTERIZATION; ELECTRODES; FABRICATION; LIGHT POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

INDIUM GALLIUM ARSENIDE; METAL SEMICONDUCTOR METAL STRUCTURE;

PHOTODETECTORS;

EID: 0031559321     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970597     Document Type: Article

References (7)

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3. KUTA, J.J., VAN DRIEL, H.M., LANDHEER, D., and ADAMS, J.A.: 'Polarization and wavelength dependence of metal-semiconductor-metal photodetector response', Appl. Phys. Lett., 1994, 64, pp. 140-142
4. BÖTTCHER, E.H., DRÖGE, E., BIMBERG, D., UMBACH, A., ENGEL, H., and COLLISCHON, M.: 'Polarization dependence of the response of micrometer and submicrometer InGaAs metal-semiconductor-metal photodetectors', IEEE Photonics Technol. Lett., 1997, 9, (accepted for publication)
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7. BÖTTCHER, E.H., DRÖGE, E., BIMBERG, D., UMBACH, A., and ENGEL, H.: 'Ultra-wide-band (> 40 GHz) submicron InGaAs metal-semiconductor-metal photodetectors', IEEE Photonics. Technol. Lett., 1996, 8, pp. 1226-1228