The thickness dependences of the electronic and structural properties of n-type microcrystalline silicon films deposited under various powers

Journal of Physics D: Applied Physics

Volumn 30, Issue 19, 1997, Pages 2686-2692

  Saha, S C ^a   Rath, J K ^a,c   Kshirsagar, S T ^b   Ray, Swati ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b NATIONAL CHEMICAL LABORATORY   (India)

^c UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONDUCTIVE FILMS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM PREPARATION; LIGHT ABSORPTION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

MICROCRYSTALLINE SILICON THIN FILMS; RADIOFREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

THIN FILMS;

EID: 0031558553     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/19/005     Document Type: Article

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