Comparison of reflection high-energy electron diffraction and low-energy electron diffraction using high-resolution instrumentation

Surface Science

Volumn 389, Issue 1-3, 1997, Pages 338-348

  Müller, Bert ^a,b   Henzler, Martin ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b ETH ZURICH   (Switzerland)

Author keywords

Epitaxy; Low energy electron diffraction; Low index single crystal surfaces; Molecular beam epitaxy; Reflection high energy electron diffraction; Silicon; Surface defects

Indexed keywords

CRYSTAL DEFECTS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS;

LOW INDEX SINGLE CRYSTALS;

SILICON;

EID: 0031556692     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00447-0     Document Type: Article

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