Simple realization of a monolithic integrated photoreceiver for 10 Gbit/s using an InP/InGaAs heterostructure

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 215-218

  Horstmann, M ^a   Hollfelder, M ^a   Schimpf, K ^a   Lehmann, R ^a   Marso, M ^a   Kordos, P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

MONOLITHIC INTEGRATED PHOTORECEIVERS; OPTOELECTRONIC TRANSMISSION SYSTEMS; WAVELENGTH ILLUMINATION;

INTEGRATED OPTOELECTRONICS;

EID: 0029697508     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)