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Materials Chemistry and Physics

Volumn 46, Issue 2-3, 1996, Pages 252-258

Effect of interaction between point defects and pre-existing dislocation loops on anomalous B diffusion in silicon

(2) Pan, S a Mitchell, Ian V a

a UNIVERSITY OF WESTERN ONTARIO (Canada)

Author keywords

Dislocation loops; Point defects; Silicon; Transient enhanced diffusion

Indexed keywords

ANNEALING; BORON; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; POINT DEFECTS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION LOOPS; SELF IMPLANTATION; TRANSIENT ENHANCED DIFFUSION;

SILICON;

EID: 0030283852 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(96)01807-X Document Type: Article

Times cited : (4)

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