Photoconductors for 200-400 μm: Choices and challenges

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 501-507

  Haegel, Nancy M ^a  

^a FAIRFIELD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC CURRENTS; INFRARED RADIATION; PHOTODETECTORS; PHOTOIONIZATION; PHOTOSENSITIVITY; RADIATION DETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

BLOCKED IMPURITY BAND DETECTORS; CURRENT LIMIT; GALLIUM ARSENIDE EXTRINSIC PHOTOCONDUCTORS; GERMANIUM PHOTOCONDUCTORS; INFRARED RADIATION DETECTORS; SILICON PHOTOCONDUCTORS;

PHOTOCONDUCTING MATERIALS;

EID: 0030214583     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00022-8     Document Type: Article

References (20)

1. P.L. Richards and L.T. Greenberg, in: Infrared and Millimeter Waves, ed. K.J. Button (Academic Press, New York, 1982), Vol. 6, p. 150.
2. E.E. Haller, Infrared Phys. Technol. 35 (1994) 127.
3. M.D. Petroff and M.G. Stapelbroek, U.S. Patent No. 4-568-960.
4. T. Herter, Infrared Astronomy with Arrays, ed. I. McLean (Kluwer, Netherlands, 1994) p. 409.
5. S.B. Stetson, D.B. Reynolds, M.G. Stapelbroek and R.L. Stermer, Proc. 30th Int. SPIE Symp. on Infrared Detectors, Sensors and Focal Plane Arrays, August 1986, San Diego, CA.
6. J.E. Huffman, A.G. Crouse, B.L. Halleck, T.V. Downs and T. Herter, J. Appl. Phys. 72 (1992) 273.
7. A.G. Kazanski, P.L. Richards and E.E. Haller, Appl. Phys. Lett. 31 (1977) 496.
8. E.E. Haller, M.R. Hueschen and P.L. Richards, Appl. Phys. Lett. 34 (1979) 495.
9. G.J. Stacey, J.W. Beeman, E.E. Haller, N. Geis, A. Poglitsch and M. Rumitz, Int. J. Infrared and Millimeter Waves 13 (1992) 1689.
10. P.L. Richards, J. Appl. Phys. 76 (1994) 1.
11. J.E. Huffman and N.L. Casey, J. Crystal Growth 129 (1993) 525.
12. D.M. Watson, M.T. Guptill, J.E. Huffman, T.N. Krabach, S.N. Raines and S. Satyapal, J. Appl. Phys. 74 (1993) 4199.
13. D.M. Watson, submitted to Phys. Rev. B.
14. I.C. Wu, J.W. Beeman, P.N. Luke, W.L. Hansen and E.E. Haller, Appl. Phys. Lett. 58 (1991) 1431.
15. I.C. Wu and E.E. Haller, Mat. Res. Soc. Proc. 261 (1992) 175.
16. G.E. Stillman, C.M. Wolfe and J.O. Dimmock, Far-infrared photoconductivity in high purity GaAs, in: Semiconductors and Semimetals, eds. R.K. Willardson and A.C. Beer (Academic Press, New York, 1977) 12, p. 291.
17. R. Katterloher, G. Jakob, E. Bauser, E.E. Haller, Th. Henning and G. Pilbratt, SPIE 2475, Orlando, 1995.
18. N.F. Mott, Proc. Phys. Soc. London A 62 (1949) 416.
19. P.R. Bratt, Impurity germanium and silicon infrared detectors, in: semiconductors and semimetals, eds. R.K. Willardson and A.C. Beer (Academic Press, New York 1977) 12, p. 41.
20. S.W. Teitsworth, R.M. Westervelt and E.E. Haller, Phys. Rev. Lett. 51 (1983) 825.