Low threshold, compressively-strained InAsP/InGaAsP and strain-compensated InAsP/InGaP 1.3μm lasers grown by gas source molecular beam epitaxy

Electronics Letters

Volumn 33, Issue 14, 1997, Pages 1263-1264

  Uenohara, H ^a,b   Gokhale, M R ^a   Dries, J C ^a   Forrest, S R ^a  

^a Princeton University   (United States)

^b NTT CORPORATION   (Japan)

Author keywords

Molecular beam epitaxial growth; Semiconductor junction lasers

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

STRAIN COMPENSATED LASERS;

QUANTUM WELL LASERS;

EID: 0031551262     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970799     Document Type: Article

References (8)

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2. SUGIURA, H., MITSUHARA, M., OOHASHI, H., HIRONO, T., and NAKASHIMA, K.: 'Metalorganic molecular beam epitaxy of strained InAsP/InGaAsP multi-quantum-wells for 1.3μm wavelength laser diodes', J. Crystal Growth, 1995, 147, pp. 1-7
3. 1-y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition', J. Quantum Electron., 1993, 29, pp. 1528-1535
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5. WAMSLEY, C.C., KOCH, M.W., and WICKS, G.W.: 'Solid source molecular beam epitaxy of low threshold strained layer 1.3μm InAsP/GalnAsP lasers', Electron. Lett., 1996, 32, pp. 1674-1675
6. KASUKAWA, A., YOKOUCHI, N., YAMANAKA, N., and IWAI, N.: 'Very low threshold current density 1.3μm InAsP/InP/InGaP/InP/ GaInAsP strain-compensated multiquantum well lasers', Electron. Lett., 1995, 31, pp. 1749-1750
7. 0 and low threshold current density of 1.3 μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers', Electron. Lett., 1995, 31, pp. 803-805
8. SHIAU, G.-J., CHAO, C.-P., BURROWS, P.E., and FORREST, S.R.: 'Low-threshold 1.3-mm wavelength, InGaAsP strained-layer multiple quantum well lasers grown by gas source molecular beam epitaxy', Appl. Phys. Lett., 1994, 65, pp. 892-894