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Volumn 181, Issue 1-2, 1997, Pages 1-8

Influence of substrate misorientation on quality of active region and performance of GaAs/AlGaAs triple-quantum-well lasers grown by molecular beam epitaxy

(3) Zhang, D H a Li, C Y b Yoon, S F a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

Author keywords

Molecular beam epitaxy; Photoluminescence; Quantum well laser

Indexed keywords

CARBON; ELECTRIC CURRENTS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PERFORMANCE; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

ACTIVE REGION; SUBSTRATE MISORIENTATION;

QUANTUM WELL LASERS;

EID: 0031549557 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00248-0 Document Type: Article

Times cited : (9)

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