메뉴 건너뛰기




Volumn 143, Issue 1, 1996, Pages 94-100

Fabrication of high-performance extended-cavity double-quantum-well lasers with integrated passive sections

Author keywords

Lasers; Propagation loss; Quantum wells; Ridge waveguide lasers

Indexed keywords

ELECTRIC CURRENTS; ELECTRON DEVICE MANUFACTURE; ENERGY GAP; INTEGRATED OPTOELECTRONICS; LASER RESONATORS; LIGHT PROPAGATION; OPTICAL WAVEGUIDES; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030085551     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19960217     Document Type: Article
Times cited : (5)

References (25)
  • 2
    • 0348062699 scopus 로고
    • Integration technologies for III-V semiconductor optoelectronics based on quantum well waveguides
    • WONG, K.K., and RAZEGHJI, M. (Eds.): SPIE, Los Angeles, USA
    • DE LA RUE, R.M., and MARSH, J.H.: 'Integration technologies for III-V semiconductor optoelectronics based on quantum well waveguides', in WONG, K.K., and RAZEGHJI, M. (Eds.): Integrated optics and optoelectronics' SPIE, Los Angeles, USA, 1993
    • (1993) Integrated Optics and Optoelectronics
    • De La Rue, R.M.1    Marsh, J.H.2
  • 3
    • 0025495114 scopus 로고
    • Reduction of the propagation losses in impurity disordered quantum well waveguides
    • O'NEILL, M., MARSH, J.H., DE LA RUE, R.M., ROBERTS, J.S., BUTTON, C., and GWILLIAM, R.: 'Reduction of the propagation losses in impurity disordered quantum well waveguides', Electron. Lett., 1990, 26, (19), pp. 1613-1614
    • (1990) Electron. Lett. , vol.26 , Issue.19 , pp. 1613-1614
    • O'Neill, M.1    Marsh, J.H.2    De La Rue, R.M.3    Roberts, J.S.4    Button, C.5    Gwilliam, R.6
  • 4
    • 0026868439 scopus 로고
    • Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering
    • ANDREW, S.R., MARSH, J.H., HOLLAND, M.C., and KEAN, A.H.: 'Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering', IEEE Photonics Technol. Lett., 1992, 4, (5), pp. 426-428
    • (1992) IEEE Photonics Technol. Lett. , vol.4 , Issue.5 , pp. 426-428
    • Andrew, S.R.1    Marsh, J.H.2    Holland, M.C.3    Kean, A.H.4
  • 5
    • 0028530852 scopus 로고
    • High quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabricated using photo-absorption induced disordering
    • MCKEE, A., MCLEAN, C.J., BRYCE, A.C., DE LA RUE, R.M., MARSH, J.H., and BUTTON, C.: 'High quality wavelength tuned multi-quantum well GaInAs/GaInAsP lasers fabricated using photo-absorption induced disordering', Appl. Phys. Lett., 1994, 65, (18), pp. 2263-2265
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.18 , pp. 2263-2265
    • Mckee, A.1    Mclean, C.J.2    Bryce, A.C.3    De La Rue, R.M.4    Marsh, J.H.5    Button, C.6
  • 7
    • 0026910283 scopus 로고
    • Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps
    • BEAUVAIS, J., MARSH, J.H., KEAN, A.H., BRYCE, A.C., and BUTTON, C.: 'Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps', Electron. Lett., 1992, 28, (17), pp. 1671-1672
    • (1992) Electron. Lett. , vol.28 , Issue.17 , pp. 1671-1672
    • Beauvais, J.1    Marsh, J.H.2    Kean, A.H.3    Bryce, A.C.4    Button, C.5
  • 9
    • 0023382976 scopus 로고
    • Carrier-induced lasing wavelength shift for quantum well laser diodes
    • TOMITA, A., and SUZUKI, A.: 'Carrier-induced lasing wavelength shift for quantum well laser diodes', IEEE J. Quantum Electron., 1987, 23, (7), pp. 1155-1159
    • (1987) IEEE J. Quantum Electron. , vol.23 , Issue.7 , pp. 1155-1159
    • Tomita, A.1    Suzuki, A.2
  • 10
    • 0027591648 scopus 로고
    • On the semiconductor laser logarithmic gain-current density relation
    • DE TEMPLE, T.A., and HERZINGER, C.M.: 'On the semiconductor laser logarithmic gain-current density relation', IEEE J. Quantum Electron., 1993, 29, (5), pp. 1246-1252
    • (1993) IEEE J. Quantum Electron. , vol.29 , Issue.5 , pp. 1246-1252
    • De Temple, T.A.1    Herzinger, C.M.2
  • 11
    • 33746622489 scopus 로고
    • A distributed Bragg reflector laser using dielectric cap disordering and strontium fluoride masking
    • Neuchatel, Switzerland
    • AYLING, S., BEAUVAIS, J., and MARSH, J.H.: 'A distributed Bragg reflector laser using dielectric cap disordering and strontium fluoride masking', European conference on Integrated optics, Neuchatel, Switzerland, 1993, pp. 7-10-7-11
    • (1993) European Conference on Integrated Optics , pp. 710-711
    • Ayling, S.1    Beauvais, J.2    Marsh, J.H.3
  • 12
    • 0021472046 scopus 로고
    • Lateral analysis of quasi-index-guided injection lasers: Transition from gain to index guiding
    • AGRAWAL, G.P.: 'Lateral analysis of quasi-index-guided injection lasers: transition from gain to index guiding', IEEE J. Quantum Electron., 1984, LT-2, (4), pp. 537-543
    • (1984) IEEE J. Quantum Electron. , vol.LT-2 , Issue.4 , pp. 537-543
    • Agrawal, G.P.1
  • 13
    • 0022252691 scopus 로고
    • Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers
    • MCILROY, P.W.A., KUROBE, A., and UEMATSU, Y.: 'Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers', IEEE J. Quantum Electron., 1985, 21, (12), pp. 1958-1963
    • (1985) IEEE J. Quantum Electron. , vol.21 , Issue.12 , pp. 1958-1963
    • Mcilroy, P.W.A.1    Kurobe, A.2    Uematsu, Y.3
  • 16
    • 0022150649 scopus 로고
    • Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers
    • ARAKAWA, Y., and YARIV, A.: 'Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers', IEEE J. Quantum Electron., 1985, 21, (10), pp. 1666-1674
    • (1985) IEEE J. Quantum Electron. , vol.21 , Issue.10 , pp. 1666-1674
    • Arakawa, Y.1    Yariv, A.2
  • 19
    • 0001222012 scopus 로고
    • Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe
    • OOI, B.S., BRYCE, A.C., WILKINSON, C.D.W., and MARSH, J.H.: 'Study of reactive ion etching-induced damage in GaAs/AlGaAs structures using a quantum well intermixing probe', Appl. Phys. Lett., 1994, 64, (5), pp. 598-600
    • (1994) Appl. Phys. Lett. , vol.64 , Issue.5 , pp. 598-600
    • Ooi, B.S.1    Bryce, A.C.2    Wilkinson, C.D.W.3    Marsh, J.H.4
  • 20
    • 33746611948 scopus 로고
    • Magnetically confined plasma reactive ion etching of GaAs/AlGaAs/AlAs quantum nanostructure
    • SONG, Y.P., WANG, P.D., TORRES, S.C.M., and WILKINSON, C.D.W.: 'Magnetically confined plasma reactive ion etching of GaAs/AlGaAs/AlAs quantum nanostructure', J. Vacuum Sci. Tech., 1994, B12, (6), pp. 1-5
    • (1994) J. Vacuum Sci. Tech. , vol.B12 , Issue.6 , pp. 1-5
    • Song, Y.P.1    Wang, P.D.2    Torres, S.C.M.3    Wilkinson, C.D.W.4
  • 22
    • 0028196453 scopus 로고
    • Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion
    • GONTIJO, I., KRAUSS, T., DE LA RUE, R.M., ROBERTS, J.S. and MARSH, J.H.: 'Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion', Electron. Lett., 1994, 30, (2), pp. 145-146
    • (1994) Electron. Lett. , vol.30 , Issue.2 , pp. 145-146
    • Gontijo, I.1    Krauss, T.2    De La Rue, R.M.3    Roberts, J.S.4    Marsh, J.H.5
  • 24
    • 0018521577 scopus 로고
    • Initial oxidation and oxide/semiconductor interface formation on GaAs
    • WILMSEN, C.W., KEE, R.W., and GEIB, K.M.: 'Initial oxidation and oxide/semiconductor interface formation on GaAs', J. Vacuum Sci., 1979, 16, (5), pp. 1434-1438
    • (1979) J. Vacuum Sci. , vol.16 , Issue.5 , pp. 1434-1438
    • Wilmsen, C.W.1    Kee, R.W.2    Geib, K.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.