Characterization of ZnSe homo-interface grown by MBE

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 489-494

  Nakanishi, F ^a   Doi, H ^a   Yamada, T ^a   Matsuoka, T ^a   Nishine, S ^a   Matsumoto, K ^a   Shirakawa, T ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Atomic hydrogen cleaning; Cross sectional TEM; Homointerface; MBE; ZnSe

Indexed keywords

CRYSTAL DEFECTS; ETCHING; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC HYDROGEN CLEANING;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031548656     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80130-4     Document Type: Article

References (7)

1. M.A. Haase, J. Qiu, J.M. Depuydt, H. Cheng, Appl. Phys. Lett, 59 (1991) 1272.
2. R.M. Park, M.B. Troffer, C.M. Rouleau, J.M. Depuydt, M.A. Haase, Appl. Phys. Lett. 57 (1990) 2127.
3. N. Nakayama, S. Itoh, T. Ohata, K. Nakano, H. Okuyama, M. Ozawa, A. Ishibashi, M. Ikeda, Y. Mori, Electron. Lett. 29 (1993) 1488.
4. S. Taniguchi, T. Hino, S. Itoh, K. Nakano, N. Nakayama, A. Ishibashi, M. Ikeda, Electron. Lett. 32 (1996) 552.
5. B.J. Wu, G.M. Heugen, J.M. DePuydt, L.H. Kuo, L. Salamanca-Riba, Appl. Phys. Lett. 68 (1996) 2828.
6. G. Cantwell, W.C. Harsch, H.L. Cotal, B.G. Markey, S.W.S. McKeever, J.E. Thomas, J. Appl. Phys. 71 (1992) 2931.
7. S.L. Young-Dong Kim, S.L. Cooper, M.V. Klein, R.T. Jonker, Appl. Phys. Lett. 62 (1993) 2387.