In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopy

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 77-81

  Sakamoto, H ^a   Takakuwa, Y ^b   Enta, Y ^b   Horie, T ^a,b   Hori, T ^b,d   Yamaguchi, T ^b,e   Miyamoto, N ^b,f   Kato, H ^c  

^a MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^d HITACHI LTD   (Japan)

^e SANYO ELECTRIC CO LTD   (Japan)

^f TOHOKU GAKUIN UNIVERSITY   (Japan)

Author keywords

Dimer dangling bond; Gas source MBE; Hydrogen adsorption state; In situ UPS; Work function

Indexed keywords

ADSORPTION; CHEMICAL BONDS; CRYSTAL ORIENTATION; DESORPTION; HYDROGEN; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; SILANES; SURFACE STRUCTURE; SYNCHROTRON RADIATION; THERMAL EFFECTS; ULTRAVIOLET SPECTROSCOPY;

DIMERS; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY (UPS);

SEMICONDUCTING SILICON;

EID: 0031548437     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80055-4     Document Type: Article

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