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Volumn 11, Issue 1, 1996, Pages 3-22
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in situ observation of the surface reaction during synchrotron radiation-assisted gas source molecular beam epitaxy of silicon
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL BONDS;
CRYSTAL DEFECTS;
DESORPTION;
ELECTRON EMISSION;
EPITAXIAL GROWTH;
LIGHT;
PHOTOCHEMICAL REACTIONS;
PHOTOELECTRON SPECTROSCOPY;
PHOTONS;
SEMICONDUCTING SILICON;
SURFACE PHENOMENA;
SYNCHROTRON RADIATION;
HYDROGEN REMOVAL;
INTENSITY OSCILLATION METHOD GROWTH DEFECT;
MONOCHROMATIZED SYNCHROTON RADIATION LIGHT;
PHOTON ENERGY;
PHOTOSTIMULATED DESORPTION;
SILICON SURFACES;
SURFACE REACTION;
SYNCHROTRON RADIATION ASSISTED GAS SOURCE MOLECULAR BEAM EPITAXY;
ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;
MOLECULAR BEAM EPITAXY;
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EID: 0030103390
PISSN: 09125434
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (8)
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References (38)
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