Occupation site and distribution of δ-doped Er in InP measured by X-ray CTR scattering

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 785-789

  Fujita, K ^a   Tsuchiya, J ^a   Ichiki, S ^a   Hamamatsu, H ^a   Matsumoto, N ^a   Tabuchi, M ^a   Fujiwara, Y ^a   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

CTR; Er doping; InP; OMVPE; Synchrotron radiation

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; ERBIUM; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SYNCHROTRON RADIATION; X RAY CRYSTALLOGRAPHY;

X RAY CRYSTAL TRUNCATION ROD SCATTERING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031548379     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80183-3     Document Type: Article

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