Influence of the ion irradiation on the properties of β-FeSi2 layers prepared by ion beam assisted deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 316-320

  Barradas, N P ^a,b   Panknin, D ^a   Wieser, E ^a   Schmidt, B ^a   Betzl, M ^a   Mucklich A ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HALL EFFECT; ION BEAMS; ION BOMBARDMENT; POLYCRYSTALLINE MATERIALS; RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

ION BEAM ASSISTED DEPOSITION (IBAD); IRON DISILICIDE;

SILICON COMPOUNDS;

EID: 0031547714     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00947-0     Document Type: Article

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