Buried (Fe1-xCox)Si2 layers with variable band gap formed by ion beam synthesis

Applied Physics A: Materials Science and Processing

Volumn 62, Issue 2, 1996, Pages 155-162

  Panknin, D ^a   Wieser, E ^a   Skorupa, W ^a   Henrion, W ^a   Lange, H ^a  

^a Materialforschung   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; COMPOSITION EFFECTS; ENERGY GAP; ION IMPLANTATION; IRON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTROSCOPY;

ION BEAM SYNTHESIS;

SEMICONDUCTOR MATERIALS;

EID: 0030085573     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050278     Document Type: Article

References (23)