A theoretical investigation on the chemical bonding of interstitial and vacancy defects in silicon during their migration

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 235-238

  Cargnoni, F ^a   Colombo, L ^a   Gatti, C ^b  

^a UNIVERSITY OF MILAN   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL BONDS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTALLIZATION; ION BOMBARDMENT; MOLECULAR DYNAMICS; POINT DEFECTS; RADIATION EFFECTS;

HARTREE FOCK CALCULATIONS; INTERSTITIAL DEFECTS; TIGHT BINDING MOLECULAR DYNAMICS (TBMD); VACANCY DEFECTS;

SEMICONDUCTING SILICON;

EID: 0031547699     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00890-7     Document Type: Article

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