An innovative method for preparing semiconductor charges used in crystal growth and shear cell diffusion experiments

Journal of Crystal Growth

Volumn 172, Issue 3-4, 1997, Pages 450-454

  Arnold, William A ^a   Matthiesen, David ^a   Bennett, Robert J ^a   Jayne, Douglas T ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRITTLENESS; DIFFUSION; ELECTRIC CONDUCTIVITY; MACHINING; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

ELECTRICAL DISCHARGE MACHINE; SEMICONDUCTOR CHARGES; SHEAR CELL DIFFUSION;

CRYSTAL GROWTH;

EID: 0031103680     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00692-6     Document Type: Article

References (5)

1. D.H. Matthiesen, PhD Thesis, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts (1988).
2. H. Rodot and L.L. Regel, J. Crystal Growth 104 (1990) 280.
3. N.H. Nachtrieb, Adv. Phys. 16 (1967) 309.
4. E.D. Bourret, J.J. Favier and O. Bourrel, J. Electrochem. Soc. 128 (1981) 2437.
5. AESAR/Johnson Matthey, P.O. Box 8247, Ward Hill, Massachusetts 01835-0747 (1992/1993).