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Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 675-679

The stability of ordered structures in SiGe films examined by strain-energy calculations

(3) Araki, T a Fujimura, N a Ito, T a

a Osaka Prefecture University (Japan)

Author keywords

2 x 1 reconstructed surface; Keating type potential; Ordered structure; SiGe; Strain energy

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; FILM GROWTH; MATHEMATICAL MODELS; SEMICONDUCTING FILMS; SURFACE STRUCTURE;

KEATING TYPE POTENTIAL; STRAIN ENERGY CALCULATIONS; SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031547386 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00017-1 Document Type: Article

Times cited : (5)

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