Surface kinetics of metalorganic vapor-phase epitaxy: Surface diffusion, nucleus formation, sticking at steps

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 513-521

  Kasu, Makoto ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

MOVPE; Nucleus; Step; STM; Surface diffusion

Indexed keywords

ANISOTROPY; ARSENIC; DIFFUSION IN SOLIDS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; PASSIVATION; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE PHENOMENA;

LATERAL STICKING PROBABILITY; NUCLEUS FORMATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031547215     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)80017-6     Document Type: Article

References (21)

1. M.G. Lagally, Y.-W. Mo, R. Kariotis, B.S. Swartzentruber and M.B. Webb, in: Kinetics of Ordering and Growth at Surfaces, Ed. M.G. Lagally (Plenum, New York, 1990) p. 145.
2. B. Lewis and D.S. Campbell, J. Vac. Sci. Technol. 4 (1968) 209.
3. J.A. Venables, Phil. Mag. 27 (1973) 697.
4. Y.-W. Mo, J. Kleiner, M.B. Webb and M.G. Lagally, Phys. Rev. Lett. 66 (1991) 1998.
5. C. Ratsch, A. Zangwill, P. Smilauer and D.D. Vvdensky, Phys. Rev. Lett. 72 (1994) 3194.
6. T. Fukui and H. Saito, J. Crystal Growth 115 (1991) 61.
7. M. Kasu, N. Kobayashi and H. Yamaguchi, Appl. Phys. Lett. 63 (1993) 678.
8. M.D. Pashley, K.W. Haberern and J.M. Gaines, Appl. Phys. Lett. 58 (1991) 406.
9. M. Kasu and N. Kobayashi, Appl. Phys. Lett. 67 (1995) 2842.
10. F.J. Lamelas, P.H. Fuoss, P. Imperatori, D.W. Kisker, G.B. Stephenson and S. Brennan, Appl. Phys. Lett. 60 (1992) 2610.
11. E.J. Heller and M.G. Lagally, Appl. Phys. Lett. 60 (1992) 2675.
12. M. Kasu and T. Fukui, Jpn. J. Appl. Phys. 31 (1992) L864.
13. P.H. Fuoss, D.W. Kisker, F.J. Lamelas, G.B. Stephenson, P. Imperatori and S. Brennan, Phys. Rev. Lett. 69 (1992) 2791.
14. M. Kasu and N. Kobayashi, Jpn. J. Appl. Phys. 33 (1994) 712.
15. M. Kasu, N. Kobayashi, J. Appl. Phys. Lett. 78 (1995) 3026; J. Appl. Phys. 79 (1996) 1822.
16. M. Kasu, N. Kobayashi, J. Appl. Phys. Lett. 78 (1995) 3026; J. Appl. Phys. 79 (1996) 1822.
17. M. Kasu and N. Kobayashi, J. Crystal Growth 170 (1997) 246.
18. T. Makimoto, Y. Yamauchi, N. Kobayashi and Y. Horikoshi, Jpn. J. Appl. Phys. 29 (1990) L645.
19. N. Kobayashi and Y. Horikoshi, Jpn. J. Appl. Phys. 30 (1991) L319.
20. T. Ito, Jpn. J. Appl. Phys. 35 (1996) L1016.
21. R.L. Schwoebel and E.J. Shipsey, J. Appl. Phys. 37 (1966) 3682.