Improved p-channel inAlAs/GaAsSb HIGFET using Ti/Pt/Au ohmic contacts to beryllium implanted GaAsSb

Solid-State Electronics

Volumn 39, Issue 2, 1996, Pages 179-191

  Merkel, K G ^a   Cerny, C L A ^a   Bright, V M ^b   Schuermeyer, F L ^a   Monahan, T P ^c   Lareau, R T ^c   Kaspi, R ^d   Rai, A K ^e  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d WRIGHT STATE UNIVERSITY   (United States)

^e Universal Energy Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BERYLLIUM; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SINTERING; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY; TRANSMISSION LINE THEORY; X RAY DIFFRACTION;

BOLTZMANNS CONSTANT; CUTOFF CHARACTERISTICS; ELECTRON CHARGE; HALL MOBILITY; HETEROSTRUCTURE INSULATED GATE FIELD EFFECT TRANSISTOR; METALLIZATION; MICROSTRUCTURAL CHARACTERIZATION; SEMICONDUCTOR ALLOY CONCENTRATION; SEMICONDUCTOR SHEET RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0030087428     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00154-9     Document Type: Review

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