Pulsed laser deposition of ZnSxSe1-x and CdSxSe1-x thin films on quartz: Measurements of energy gap, absorption coefficient and refractive index

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3404, Issue , 1997, Pages 39-46

  Ambrico, M ^a   Stagno, V ^a   Smaldone, D ^a   Martino, R ^a   Perna, G ^a   Capozzi, V ^a  

^a CNR   (Italy)

Author keywords

II VI compounds; Laser ablation; Semiconductors

Indexed keywords

ABSORPTION; CADMIUM COMPOUNDS; ENERGY GAP; QUARTZ; REFRACTIVE INDEX; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC COMPOUNDS;

ABSORPTION COEFFICIENTS;

PULSED LASER DEPOSITION;

EID: 0031393388     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.308654     Document Type: Conference Paper

References (11)

1. Structural and optical properties of II-VI thin films and II-VI multialyered structures grown on silicon by laser ablation
2. Laser ablation of highly oriented CdSe thin films and CdSe/CdTe multlayers on silicon substrates
3. Photoluminescence analysis of laser deposited CdS films
4. 1-x by laser evaporation deposition
5. Crystalline phases of II-VI compound semiconductors grown by pulsed laser deposition
6. Determination of the thickness and optical constants of amorphous silicon
7. Optimization of the structural and optical properties of ZnS epilayers grown on (100) GaAs by MOVPE