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Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 144-147

Optimization of the structural and optical properties of ZnS epilayers grown on (100) GaAs by MOVPE

(8) Leo, G a Lovergine, N b Prete, P b Longo, M b Cingolani, R b Mancini, A M b Romanato, F c Drigo, A V c

a CNR (Italy)

b INFM (Italy)

c UNIVERSITY OF PADOVA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; OPTIMIZATION; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SURFACE TREATMENT;

CHANNELING RUTHERFORD BACKSCATTERING SPECTROSCOPY; CRYSTALLINE QUALITY; OPTICAL QUALITY; PRECURSOR VAPOR PHASE STOICHIOMETRY; SEMICONDUCTING ZINC SULFIDE EPILAYER;

SEMICONDUCTING FILMS;

EID: 0030562218 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00859-4 Document Type: Article

Times cited : (12)

References (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.