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Volumn 3359, Issue , 1997, Pages 163-171

Role of growth defects on carrier dynamics: Semiinsulating GaAs

Author keywords

Carrier transport; EL2; LEC grown gallium arsenide; Transient gratings

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRON TRANSPORT PROPERTIES; IONIZATION; LASER MODE LOCKING; LASER PULSES; LIGHT ABSORPTION; LIGHT TRANSMISSION; MATHEMATICAL MODELS; OPTICAL BEAM SPLITTERS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031392854     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.306208     Document Type: Conference Paper
Times cited : (2)

References (14)
  • 7
    • 0010389635 scopus 로고
    • Photodiffractive and photoabsorptive techniques for nondestructive control of semiconducting wafers and structures
    • (1993) Proc. SPIE , vol.2113 , pp. 2
    • Jarašiunas, K.1    Gaubas, E.2
  • 8
    • 0001190496 scopus 로고
    • Picosecond pump-probe technique to measure deep level, free-carrier and two-photon cross sections in GaAs
    • (1989) J. Appl. Phys. , vol.66 , Issue.6 , pp. 2407
    • Valley1    Boggess, T.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.