Role of growth defects on carrier dynamics: Semiinsulating GaAs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3359, Issue , 1997, Pages 163-171

  Mizeikis, V ^a   Jarasiunas K ^a   Storasta, J ^a   Gudelis, V ^a   Bastiene, L ^a   Sudzius M ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

Author keywords

Carrier transport; EL2; LEC grown gallium arsenide; Transient gratings

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRON TRANSPORT PROPERTIES; IONIZATION; LASER MODE LOCKING; LASER PULSES; LIGHT ABSORPTION; LIGHT TRANSMISSION; MATHEMATICAL MODELS; OPTICAL BEAM SPLITTERS; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER TRANSPORT; LIQUID-ENCAPSULATED CZOHRALSKY TECHNIQUE; SEMIINSULATING GALLIUM ARSENIDE; TRANSIENT GRATING;

DIFFRACTION GRATINGS;

EID: 0031392854     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.306208     Document Type: Conference Paper

References (14)

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